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首页> 外文期刊>Frontiers in Human Neuroscience >Short Duration Repetitive Transcranial Electrical Stimulation During Sleep Enhances Declarative Memory of Facts
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Short Duration Repetitive Transcranial Electrical Stimulation During Sleep Enhances Declarative Memory of Facts

机译:睡眠期间持续时间短的重复经颅电刺激增强事实声明性记忆

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Transcranial electrical stimulation (tES) during sleep has been shown to successfully modulate memory consolidation. Here, we tested the effect of short duration repetitive tES (SDR-tES) during a daytime nap on the consolidation of declarative memory of facts in healthy individuals. We use a previously described approach to deliver the stimulation at regular intervals during non-rapid eye movement (NREM) sleep, specifically stage NREM2 and NREM3. Similar to previous studies using tES, we find enhanced memory performance compared to sham both after sleep and 48 h later. We also observed an increase in the proportion of time spent in NREM3 sleep and SDR-tES boosted the overall rate of slow oscillations (SOs) during NREM2/NREM3 sleep. Retrospective investigation of brain activity immediately preceding stimulation suggests that increases in the SO rate are more likely when stimulation is delivered during quiescent and asynchronous periods of activity in contrast to other closed-loop approaches which target phasic stimulation during ongoing SOs.
机译:睡眠期间经颅电刺激(tES)已被证明可以成功地调节记忆巩固。在这里,我们测试了白天小睡期间短时重复tES(SDR-tES)对巩固健康个体事实声明式记忆的影响。我们使用先前描述的方法在非快速眼动(NREM)睡眠期间(特别是阶段NREM2和NREM3)以规则的间隔传递刺激。与以前使用tES进行的研究相似,我们发现睡眠后和48小时后与假手术相比,记忆功能得到了增强。我们还观察到在NREM3睡眠中花费的时间比例增加,而SDR-tES则提高了NREM2 / NREM3睡眠期间缓慢振荡(SOs)的总体速率。对刺激之前立即进行的大脑活动的回顾性研究表明,与在进行中的SO期间以阶段性刺激为目标的其他闭环方法相反,当在静止和异步活动期间进行刺激时,SO发生率增加的可能性更大。

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