首页> 外文期刊>Frontiers in Human Neuroscience >Increase in short-term memory capacity induced by down-regulating individual theta frequency via transcranial alternating current stimulation
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Increase in short-term memory capacity induced by down-regulating individual theta frequency via transcranial alternating current stimulation

机译:通过经颅交流电刺激下调个体theta频率引起的短期记忆能力增加

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Working memory (WM) and short-term memory (STM) supposedly rely on the phase-amplitude coupling (PAC) of neural oscillations in the theta and gamma frequency ranges. The ratio between the individually dominant gamma and theta frequencies is believed to determine an individual’s memory capacity. The aim of this study was to establish a causal relationship between the gamma/theta ratio and WM/STM capacity by means of transcranial alternating current stimulation (tACS). To achieve this, tACS was delivered at a frequency below the individual theta frequency. Thereby the individual ratio of gamma to theta frequencies was changed, resulting in an increase of STM capacity. Healthy human participants ( N = 33) were allocated to two groups, one receiving verum tACS, the other underwent a sham control protocol. The electroencephalogram (EEG) was measured before stimulation and analyzed with regard to the properties of PAC between theta and gamma frequencies to determine individual stimulation frequencies. After stimulation, EEG was recorded again in order to find after-effects of tACS in the oscillatory features of the EEG. Measures of STM and WM were obtained before, during and after stimulation. Frequency spectra and behavioral data were compared between groups and different measurement phases. The tACS- but not the sham stimulated group showed an increase in STM capacity during stimulation. WM was not affected in either groups. An increase in task-related theta amplitude after stimulation was observed only for the tACS group. These augmented theta amplitudes indicated that the manipulation of individual theta frequencies was successful and caused the increase in STM capacity.
机译:据称,工作记忆(WM)和短期记忆(STM)依赖于theta和gamma频率范围内神经振荡的相幅耦合(PAC)。人们认为,占主导地位的伽马频率和theta频率之比决定了个人的记忆能力。这项研究的目的是通过经颅交流电刺激(tACS)建立γ/θ比与WM / STM容量之间的因果关系。为此,以低于单个θ频率的频率递送tACS。从而改变了伽马与θ频率的个体比率,导致STM容量的增加。健康的人类参与者(N = 33)被分为两组,一组接受verum tACS,另一组接受假手术方案。在刺激之前测量脑电图(EEG),并分析θ和γ频率之间PAC的特性,以确定各个刺激频率。刺激后,再次记录脑电图,以发现tACS在脑电图振荡特征中的后遗症。在刺激之前,期间和之后获得STM和WM的量度。比较各组和不同测量阶段之间的频谱和行为数据。 tACS-刺激组(而非假刺激组)在刺激过程中显示STM能力增加。 WM两组均未受影响。仅在tACS组中观察到刺激后与任务相关的theta振幅增加。这些增大的θ振幅表明,对单个θ频率的操纵是成功的,并引起了STM容量的增加。

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