Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica

摘要

Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 mm average size