Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

Achmad Fadhol

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Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

机译：Si / Si1-xGex / Si异质结双极晶体管对基极电阻的高影响掺杂和带隙变窄的研究

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《Makara Seri Teknologi》 |2010年第1期|共6页
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Achmad Fadhol;
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机译：锗含量和基极掺杂水平对非本征基极电阻和SiGe：C异质结双极晶体管的动态性能的影响
2. A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor [J] . Xue CL, Yao F, Shi WH, Chinese physics letters . 2007,第7期

机译：基极-发射极自对准多指Si1-xGex / Si功率异质结双极晶体管
3. A Base-Emitter Self-Aligned Multi-Finger Si1-xGex/Si Power Heterojunction Bipolar Transistor [J] . XUE Chun-Lai, YAO Fei, SHI Wen-Hua, 中国物理快报：英文版 . 2007,第007期

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4. Evidence of the Influence of Heavy-doping Induced Bandgap Narrowing on the Collector Current of Strained SiGe-base Heterojunction Bipolar Transistors [C] . Poortmans J., Jain S.C., Caymax M., Solid State Device Research Conference, 1992. ESSDERC '92 . 1992

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7. Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor [O] . Achmad Fadhol 2010

机译：si / si1-xGex / si异质结双极晶体管高掺杂对基极电阻和带隙窄化的影响研究
8. Influence of Pseudomorphic Base-Emitter Spacer Layers on Current-InducedDegradation of Beryllium-Doped InGaAs/InAlAs Heterojunction Bipolar Transistors [R] . Zhang, K., Zhang, X., Bhattacharya, P., 1996

机译：假晶基极 - 发射极间隔层对铍掺杂InGaas / Inalas异质结双极晶体管电流诱导退化的影响

Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

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