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Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction

机译：具有宽带隙低互扩散基极-发射极结的异质结双极晶体管的形成方法

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摘要

A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (36) is sufficiently thin, preferably less than 200 &angst;, so as to be coherently strained.

机译：异质结双极晶体管（ 20 ）带有硅（Si）基极区（ 34 ），该硅区与多层发射极（ 38 ）形成半导体结B>）具有靠近基极区（ 34 ）的薄砷化镓（GaAs）发射极层（ 36 ）和远侧磷化镓发射极层（40）。 GaAs发射极层（ 36 ）足够薄，优选小于200ang，以使其相干应变。 展开▼

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公开/公告号US6171920B1

专利类型

公开/公告日2001-01-09

原文格式PDF

申请/专利权人 EL-SHARAWY EL-BADAWY AMIEN;HASHEMI MAJID M.;
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申请/专利号US19990267252

发明设计人 EL-BADAWY AMIEN EL-SHARAWY;MAJID M. HASHEMI;
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申请日1999-03-12

分类号H01L213/31;

国家 US

入库时间 2022-08-22 01:05:49

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2. 具有浅层向外扩散P+发射极区的锗化硅异质结双极晶体管 [P] . 中国专利： CN104205336A . 2014-12-10

3. HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION [P] . 欧洲知识产权局专利： EP1019966A4 . 2000-07-19

机译：异质结双极晶体管具有宽带隙，低扩散基极-发射极结

4. HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION [P] . 欧洲知识产权局专利： EP1019966A1 . 2000-07-19

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5. HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION [P] . 世界知识产权组织专利： WO9917372A1 . 1999-04-08

机译：异质结双极晶体管具有宽带隙，低扩散基极-发射极结

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