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Low-Loss Slot Waveguides with Silicon (111) Surfaces Realized Using Anisotropic Wet Etching

机译:使用各向异性湿蚀刻实现具有硅(111)表面的低损耗缝隙波导

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We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.
机译:我们演示了绝缘体上硅(SOI)平台上的低损耗缝隙波导。首先通过标准电子束光刻和干法蚀刻工艺在Si(110)平面上沿(11-2)方向定向的波导。然后使用基于TMAH的各向异性湿法蚀刻技术去除任何残留的侧壁粗糙度。使用这种制造技术,对于波长在1550nm附近的硅缝隙波导,传输损耗可低至3.7dB / cm。我们还实现了硅条波导的1dB / cm的低传播损耗。

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