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Friction characteristics of mechanically exfoliated and CVD-grown single-layer MoS 2

机译:机械剥落和CVD生长的单层MoS 2 的摩擦特性

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In this work, the friction characteristics of single-layer MoS~(2)prepared with chemical vapor deposition (CVD) at three different temperatures were quantitatively investigated and compared to those of single-layer MoS~(2)prepared using mechanical exfoliation. The surface and crystalline qualities of the MoS~(2)specimens were characterized using an optical microscope, atomic force microscope (AFM), and Raman spectroscopy. The surfaces of the MoS~(2)specimens were generally flat and smooth. However, the Raman data showed that the crystalline qualities of CVD-grown single-layer MoS~(2)at 800 °C and 850 °C were relatively similar to those of mechanically exfoliated MoS~(2)whereas the crystalline quality of the CVD-grown single-layer MoS~(2)at 900 °C was lower. The CVD-grown single-layer MoS~(2)exhibited higher friction than mechanically exfoliated single-layer MoS~(2), which might be related to the crystalline imperfections in the CVD-grown MoS~(2). In addition, the friction of CVD-grown single-layer MoS~(2)increased as the CVD growth temperature increased. In terms of tribological properties, 800 °C was the optimal temperature for the CVD process used in this work. Furthermore, it was observed that the friction at the grain boundary was significantly larger than that at the grain, potentially due to defects at the grain boundary. This result indicates that the temperature used during CVD should be optimized considering the grain size to achieve low friction characteristics. The outcomes of this work will be useful for understanding the intrinsic friction characteristics of single-layer MoS~(2)and elucidating the feasibility of single-layer MoS~(2)as protective or lubricant layers for micro- and nano-devices.
机译:在这项工作中,定量研究了在三个不同温度下化学气相沉积(CVD)制备的单层MoS〜(2)的摩擦特性,并将其与使用机械剥离法制备的单层MoS〜(2)的摩擦特性进行了比较。使用光学显微镜,原子力显微镜(AFM)和拉曼光谱对MoS〜(2)样品的表面和晶体质量进行了表征。 MoS〜(2)试样的表面通常是平坦而光滑的。然而,拉曼数据表明,CVD生长的单层MoS〜(2)在800°C和850°C下的晶体质量与机械剥离MoS〜(2)的晶体质量相对相似,而CVD的晶体质量在900°C下生长的单层MoS〜(2)较低。 CVD生长的单层MoS〜(2)表现出比机械剥离的单层MoS〜(2)高的摩擦力,这可能与CVD生长的MoS〜(2)的晶体缺陷有关。另外,随着CVD生长温度的升高,CVD生长的单层MoS〜(2)的摩擦力增加。就摩擦学特性而言,800°C是这项工作中使用的CVD工艺的最佳温度。此外,观察到,晶界处的摩擦明显大于晶粒处的摩擦,这可能是由于晶界处的缺陷造成的。该结果表明在CVD期间使用的温度应考虑晶粒尺寸来优化以实现低摩擦特性。这项工作的结果将有助于理解单层MoS〜(2)的固有摩擦特性,并阐明单层MoS〜(2)作为微米和纳米设备的保护层或润滑剂层的可行性。

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