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首页> 外文期刊>International Journal on Smart Sensing and Intelligent Systems >Pure and Cupricated BaSnO 3 thick film resistor: Synthesis, Characterization and studies on its gas sensing performance
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Pure and Cupricated BaSnO 3 thick film resistor: Synthesis, Characterization and studies on its gas sensing performance

机译:纯铜和BaSnO 3厚膜电阻器的合成,表征及其气敏性能研究

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In this work we report the synthesis, microstructure, electric properties and sensingperformance of BaSnO 3 (BS) powder, it was prepared by mechano-chemical method. As preparedpowder is calcinated at temperatures 1100 o C, and 1300 o C tested for crystallization. Thick films wereprepared using simple screen-printing technology. Structural and electrical analyses were performedand the results have been correlated. The material was tested for various gases such as CO, CO2 , NH 3 ,Cl 2 , H 2 , LPG, ethanol, and H 2 S. The pure BS film shows good response multiple gases at variousoperating temperature up to 500 0 C as NH 3 , CO 2 , CO, ethanol and, H 2 S for different gas concentrations,when the pure film is surface modified with aqueous solution of Cucl 2 using simple dipping techniquefor various time intervals (5 min., 10 min., 20 min. and, 30 min.), film improves the selectivity andsensitivity. Maximum response (S=36.2) was found to H 2 S gas at temperature of 250 0 C and S=12.1 forethanol at 500o C for gas concentration of 50 ppm with film dipped for 10 min. time interval. Thecharacterization of the films was done by XRD, SEM and TG-DTA. Crystallite size, texture coefficient,specific surface area, electric properties and gas sensitivity of the films were measured and presented.
机译:在这项工作中,我们报告了BaSnO 3(BS)粉末的合成,微观结构,电性能和传感性能,它是通过机械化学方法制备的。所制备的粉末在1100 o C的温度下煅烧,并在1300 o C进行结晶测试。使用简单的丝网印刷技术可以制备厚膜。进行了结构和电气分析,并将结果关联起来。测试了该材料的各种气体,例如CO,CO2,NH 3,Cl 2,H 2,LPG,乙醇和H 2S。纯BS膜在高达500 0 C的各种工作温度下显示出良好的响应性,多种气体为NH如图3所示,当使用简单的浸渍技术在不同的时间间隔(5分钟,10分钟,20分钟)中用Cucl 2水溶液对纯膜进行表面改性时,对于不同气体浓度的CO 2,CO 2,乙醇和H 2 S。 30分钟),薄膜可提高选择性和灵敏度。发现在250 0 C的温度下对H 2 S气体具有最大响应(S = 36.2),在500oC的气体浓度为50 ppm且浸有薄膜10分钟的情况下,对H 2 S气体具有最大响应(S = 12.1)。时间间隔。膜的表征通过XRD,SEM和TG-DTA进行。测量并给出了薄膜的微晶尺寸,织构系数,比表面积,电性能和气体敏感性。

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