An Improved Theoretical Model to Explain Electronic and Optical Properties of p-Type GaAs/AlGaAs Superlattices for Multi-Wavelength Normal Incidence P

摘要

We extend our previous theoretical analy-sis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of