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A High-Accuracy Ultra-Low-Power Offset-Cancelation On-Off Bandgap Reference for Implantable Medical Electronics

机译:用于植入式医疗电子产品的高精度超低功耗失调消除开带隙基准

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An ultra-low-power and high-accuracy on-off bandgap reference (BGR) is demonstrated in this paper for implantable medical electronics. The proposed BGR shows an average current consumption of 78 nA under 2.8 V supply and an output voltage of 1.17 V with an untrimmed accuracy of 0.69%. The on-off bandgap combined with sample-and-hold switched-RC filter is developed to reduce power consumption and noise. The on-off mechanism allows a relatively higher current in the sample phase to alleviate the process variation of bipolar transistors. To compensate the error caused by operational amplifier offset, the correlated double sampling strategy is adopted in the BGR. The proposed BGR is implemented in 0.35 μm standard CMOS process and occupies a total area of 0.063 mm 2 . Measurement results show that the circuit works properly in the supply voltage range of 1.8–3.2 V and achieves a line regulation of 0.59 mV/V. When the temperature varies from ?20 to 80 °C, an average temperature coefficient of 19.6 ppm/°C is achieved.
机译:本文展示了一种用于植入式医疗电子产品的超低功耗,高精度开-关带隙基准(BGR)。所建议的BGR在2.8 V电源下平均功耗为78 nA,输出电压为1.17 V,精确度为0.69%。结合带采样保持开关RC滤波器的开关带隙可以降低功耗和噪声。开-关机制允许采样阶段有相对较高的电流,以减轻双极晶体管的工艺变化。为了补偿运算放大器失调引起的误差,BGR中采用了相关的双采样策略。提出的BGR以0.35μm的标准CMOS工艺实现,占地总面积为0.063 mm 2。测量结果表明,该电路可在1.8–3.2 V的电源电压范围内正常工作,并达到0.59 mV / V的线路调节度。当温度在20至80°C之间变化时,平均温度系数为19.6 ppm /°C。

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