A 13.56-MHz −25-dBm-Sensitivity Inductive Power Receiver System-on-a-Chip With a Self-Adaptive Successive Approximation Resonance Compensation Front-End for Ultra-Low-Power Medical Implants

摘要

Battery-less and ultra-low-power implantable medical devices (IMDs) with minimal invasiveness are the latest therapeutic paradigm. This work presents a 13.56-MHz inductive power receiver system-on-a-chip with an input sensitivity of -25.4 dBm (2.88 mu W) and an efficiency of 46.4% while driving a light load of 30 mu W. In particular, a real-time resonance compensation scheme is proposed to mitigate resonance variations commonly seen in IMDs due to different dielectric environments, loading conditions, and fabrication mismatches, etc. The power-receiving front-end incorporates a 6-bit capacitor bank that is periodically adjusted according to a successive-approximation-resonance-tuning (SART) algorithm. The compensation range is as much as 24 pF and it converges within 12 clock cycles and causes negligible power consumption overhead. The harvested voltage from 1.7 V to 3.3 V is digitized on-chip and transmitted via an ultra-wideband impulse radio (IR-UWB) back-telemetry for closed-loop regulation. The IC is fabricated in 180-nm CMOS process with an overall current dissipation of 750 nA. At a separation distance of 2 cm, the end-to-end power transfer efficiency reaches 16.1% while driving the 30-mu W load, which is immune to artificially induced resonance capacitor offsets. The proposed system can be applied to various battery-less IMDs with the potential improvement of the power transfer efficiency on orders of magnitude.