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首页> 外文期刊>International Journal of VLSI Design & Communication Systems >Mitigation of Soft Errors on 65NM Combinational Logic Gates via Buffer Gate
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Mitigation of Soft Errors on 65NM Combinational Logic Gates via Buffer Gate

机译:通过缓冲门缓解65NM组合逻辑门上的软错误

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Through technology development, VLSI fabrication is becoming smaller in size which causes muchsensitivity of VLSI circuit to noise effects especially soft error. In this paper, we present a method tomitigate soft error in combinational logic gates based on 65 nm technology that is able to reduce thepossibility of noise propagation in combinational logic gate. We evaluate our result based on ISCAS 85benchmark circuit. Through DFS algorithm and using analytical model derived by stimulation of eachcombinational logic gate in transistor layer, soft error is processed in paths of ISCAS 85 circuit benchmarkand a single buffer logic gate is added to the end of the paths that have more potential to be affected by softerror. Therefore, possibility of soft error distribution through circuit benchmark is measured. The buffergates that mitigate soft errors on the benchmark paths are kept and others are eliminated. After processing,new circuit benchmark is available that includes added buffer logic gate to only critical paths. This is morereliable than initial ISCAS85 circuit benchmark in terms of illuminating soft error. The results show thatpossibility of soft error distribution is reduced intelligently and due to adding buffer gate to just suspiciouspaths of benchmark, power and delay are optimum.
机译:随着技术的发展,VLSI的制造尺寸越来越小,这使得VLSI电路对噪声影响特别是软误差变得更加敏感。在本文中,我们提出了一种基于65 nm技术的缓解组合逻辑门软错误的方法,该方法能够减少组合逻辑门中噪声传播的可能性。我们根据ISCAS 85基准电路评估结果。通过DFS算法并使用通过激励晶体管层中每个组合逻辑门得出的分析模型,在ISCAS 85电路基准测试路径中处理软错误,并在路径末端添加单个缓冲逻辑门,该逻辑门可能会受到更多的影响软错误。因此,测量了通过电路基准测试进行软错误分配的可能性。保留了缓解基准路径上的软错误的缓冲门,并消除了其他情况。经过处理后,可以使用新的电路基准测试,其中包括仅对关键路径添加了缓冲逻辑门。就照明软错误而言,这比最初的ISCAS85电路基准更为可靠。结果表明,可以智能地减少软错误分配的可能性,并且由于仅在基准的可疑路径上添加了缓冲门,因此功耗和延迟都达到了最佳。

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