Substrate noise coupling in NMOS transistor for RF/analog circuits

摘要

Substrate noise issues are important for the smooth integration of analog and digital circuitries on the same die. The substrate coupling mechanism with simulation and measurement in a 0.13 µm common source NMOS is demonstrated. The coupling mechanism is related with resistance of ground interconnects; also the importance of coupling mechanism is demonstrated. The results are showing the variation of resistance with distance between the contacts, the inductance and impedance for inductive and capacitive coupling.