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首页> 外文期刊>International Journal of Optoelectronic Engineering >Optical and Electrical Properties of CdO: Sn Thin Films for Solar Cell Applications
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Optical and Electrical Properties of CdO: Sn Thin Films for Solar Cell Applications

机译:用于太阳能电池的CdO:Sn薄膜的光电性能

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摘要

Tin doped Cadmium Oxide (CdO:Sn) thin films were successfully deposited by thermal evaporation in the Edward’s Auto 306 Magnetron Sputtering System. Their optical and electrical properties were studied using Solid Spec-3700 DUV Spectrophotometer and Four Point Probe respectively. The optical properties of CdO:Sn thin films showed high transparency in the visible region of the electromagnetic spectrum which varied with Sn doping, this makes CdO:Sn an excellent candidate for optoelectronic applications such as a window layer. Undoped Cadmium Oxide (CdO) thin films were also prepared for comparison with tin doped Cadmium Oxide thin films. Doped and undoped Cadmium Oxide had a transmittance of 70-85% and 50-89% respectively. Band gap energy for undoped CdO was 2.43eV while that of tin doped CdO ranged between 3.19-3.29eV for tin doping of 1-7%. Resistivity of undoped and Tin doped Cadmium Oxide ranged between 16-93?cm.
机译:锡掺杂的氧化镉(CdO:Sn)薄膜已通过热蒸发在Edward的Auto 306磁控管溅射系统中成功沉积。分别使用Solid Spec-3700 DUV分光光度计和四点探针研究了它们的光学和电学性质。 CdO:Sn薄膜的光学特性在电磁光谱的可见区域具有很高的透明度,该透明度随Sn的掺杂而变化,这使得CdO:Sn成为光电子应用(例如窗口层)的极佳候选者。还制备了未掺杂的氧化镉(CdO)薄膜,用于与锡掺杂的氧化镉薄膜进行比较。掺杂和未掺杂的氧化镉的透射率分别为70-85%和50-89%。未掺杂的CdO的带隙能为2.43eV,而掺锡的CdO的带隙能为1.7%时在3.19-3.29eV之间。未掺杂和锡掺杂的氧化镉的电阻率在16-93?cm之间。

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