A Perspective Review of Tunnel Field Effect Transistor with Steeper Switching Behavior and Low off Current (IOFF) for Ultra Low Power Applications

A.Maria Jossy; T.Vigneswaran

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A Perspective Review of Tunnel Field Effect Transistor with Steeper Switching Behavior and Low off Current (IOFF) for Ultra Low Power Applications

机译：具有陡峭开关特性和低关断电流（IOFF）的隧道场效应晶体管的超前研究综述

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《International Journal of Engineering and Technology》 |2014年第5期|共13页
作者
A.Maria Jossy; T.Vigneswaran;
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1. Design and Performance Analysis of Tunnel Field Effect Transistor (TFET) Based Current Conveyor for Ultra Low Power Biomedical Applications [J] . Mohd Ajmal Kafeel, Mohammad Zulqarnain, Mohd Hasan, Journal of active and passive electronic devices . 2016,第2a3期

机译：基于隧道场效应晶体管（TFET）的超低功耗生物医学应用电流传输器的设计和性能分析
2. InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v [J] . Kim K.R., Yoon Y.J., Cho S., Current applied physics: the official journal of the Korean Physical Society . 2013,第9期

机译：InGaAs / InP异质结沟道隧穿场效应晶体管，用于低于0.5 v电源电压的超低工作和待机功率应用
3. Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications [J] . Venkatesh M., Suguna M., Balamurugan N. B. Journal of Electronic Materials . 2019,第10期

机译：用于超低功率应用的锗源双光晕双介质三重材料围绕栅极隧道场效应晶体管的亚阈值性能分析
4. Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications [C] . Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, IEEE International Electron Devices Meeting . 2016

机译：出色的阈值开关器件（Ioff〜1 pA），具有原子级金属丝，适用于陡斜率（<5 mV / dec），超低压（Vdd = 0.25 V）FET应用
5. Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic. [D] . Kim, Sung Hwan. 2012

机译：用于超低功耗数字逻辑的锗源隧道场效应晶体管。
6. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors [O] . Eunah Ko, Jaemin Shin, Changhwan Shin 2018

机译：用于低功率应用的陡峭开关设备：负差分电容/电阻场效应晶体管
7. Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications [O] . Guenifi N, Rahi SB, Larbi M 2020

机译：低功率应用双栅极隧道场效应晶体管中的Ampolar电流和RF性能分析

A Perspective Review of Tunnel Field Effect Transistor with Steeper Switching Behavior and Low off Current (IOFF) for Ultra Low Power Applications

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