NEGF analysis of double gate SiGe and GaAs Tunnel FETs

摘要

In recent past extensive device simulation work has already been done on Tunnel Field Effect Transistors (TFETs). Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non-Equilibrium Green’s Function (NEGF) formalism has proved effective in modeling nanoscale devices. We model SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, Ion-Ioff ratios and subthreshold slope. The Poisson equation and the equilibrium statistical mechanical equation have been solved using MATLAB by providing the potential profile.