Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors

摘要

A sol-gel method was applied with acetates as precursors under standard atmospheric conditions tofabricate ZnO semiconducting thin-films. We evaluated the performances of thin-film transistor (TFT)which has a ZnO active channel layer and the effects of stannum (Sn) doping on the threshold voltageof ZnO TFTs at a low temperature (300 , which was compared with the performances of the un- doped ZnO and stannum-doped zinc oxide (ZTO) TFT. The electrical characteristics of thin-films andTFTs doped with stannum concentrations of 0.3 mole ratio were examined; and reductions at thethreshold voltage of 5.6 V were found. At 300 it was observed that the stannum-doped zinc oxide 2 (ZTO) device has a mobility of 4.2 10 cm /V-s, a threshold voltage of 5.3 V, and an on/off current4 ratio of 10 .