首页> 外文期刊>International Journal of Electrochemical Science >Investigation on Corrosion Behavior and Semiconductor Properties of Oxide Films on SS316L, Inconel600 and Incoloy800 in High Temperature Water with ZnO Addition
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Investigation on Corrosion Behavior and Semiconductor Properties of Oxide Films on SS316L, Inconel600 and Incoloy800 in High Temperature Water with ZnO Addition

机译:添加ZnO的高温水中SS316L,Inconel600和Incoloy800氧化膜的腐蚀行为和半导体性能研究。

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Oxide films on 316L stainless steel, Inconel600 and Incoloy800 were formed in 288C hightemperature water with/without 650ppb ZnO addition. Corrosion resistance and semiconductorproperties of oxide films on alloys after oxidation were characterized by electrochemicalpotentiodynamic polarization and capacitance measurement (Mott-Schottky plot).After oxidation, thesurfaces of alloys with ZnO addition indicated smaller crystals than the ones without ZnO additions,supported by FE-SEM images. XPS suggested an enrichment of Zn with iron and oxygen, under thesurface of oxide film on the alloys. Flat band potential of the oxide films moves to the negativedirection, besides a decreasing of donor density with ZnO addition. Point defect model was employedto investigate the effect of ZnO addition on semiconductor properties of oxide films led to enhancedcorrosion resistance.
机译:在288C高温水中添加/不添加650ppb ZnO,在316L不锈钢,Inconel600和Incoloy800上形成氧化膜。通过电化学电位极化和电容测量(Mott-Schottky图)表征了氧化后合金上氧化膜的耐蚀性和半导体性能。氧化后,添加了ZnO的合金的表面显示出比未添加ZnO的合金小的晶体,这是由FE-SEM支持的图片。 XPS建议在合金的氧化膜表面下用铁和氧富集锌。氧化膜的平坦带电势向负方向移动,除了添加ZnO会降低施主密度。采用点缺陷模型研究了ZnO的添加对氧化膜半导体性能的影响,从而提高了耐蚀性。

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