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Block Utilization-Aware Buffer Replacement Scheme for Mobile NAND Flash Storage

机译:移动NAND闪存存储的块利用感知缓冲区替换方案

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摘要

NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.
机译:如今,诸如eMMC和microSD卡之类的NAND闪存存储设备已广泛用于移动设备中。在本文中,我们提出了一种用于移动NAND闪存的新型缓冲区替换方案。它通过退出对闪存友好的页面来有效地提高写入性能,并通过按近期顺序管理页面来保持较高的缓存命中率。我们的实验结果表明,所提出的方案比最近文献Sp.Clock的最佳方案要好48%。

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