i style="mso-bidi-font-style:normal"span style="mso-bidi-language:AR-IQ" lang="EN-US"AC/span/ispan style="mso-bidi-language: AR-IQ" lang="EN-US" conductivity and dielectric behaviour of CuZnSnOsub4/sub compound prepared by powder technology /span

摘要

A new type of oxides like CuZnSnOsub4/sub compound was synthesized by powder technology and pressed it as a pellet of 8.4 mm diameter and 1 mm thickness. X-ray diffraction patterns for the prepared samples have been studied. The behaviour of the dielectric (i.e. dielectric constant i style="mso-bidi-font-style:normal"?μ/isub1/sub and dielectric loss i style="mso-bidi-font-style:normal"?μ/isub2/sub) and i style="mso-bidi-font-style:normal"ac/i conductivity have been investigated. The sharply decrease of dielectric constant i style="mso-bidi-font-style:normal"?μ/isub1/sub was noticed at low frequency range and was independent of frequency at high frequency range. Otherwise, the variation of the dielectric loss i style="mso-bidi-font-style:normal"?μ/isub2/sub with frequency is shown and the absorption peak located at 120 Hz frequency at room temperature and moves to higher frequency with the increase of temperature. It was found that after critical frequency, i style="mso-bidi-font-style:normal"ac/i conductivity logi style="mso-bidi-font-style:normal"s/ispan style="mso-bidi-font-style:italic" lang="EN-GB"??increases nonlinearly with the increase of temperature but there is no variation at low frequency up to the critical frequency. The frequency exponent (is/i) is determined, and the data suggest that is /iincreases with temperature. The variation of is /iwith temperature suggests that i style="mso-bidi-font-style:normal"ac/i conduction is due to the correlated barrier hopping. These data confirmed that this compound has good span style="mso-bidi-language:AR-IQ" lang="EN-GB"stability at high frequencies for waveguide devicesspan style="mso-bidi-language:AR-IQ" lang="EN-GB" and is useful as dielectric material at low frequencies. /span/span/span