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Coping with Poor Dynamic Performance of Super-Junction MOSFET Body Diodes

机译:应对超级结型MOSFET体二极管的动态性能差

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Poor dynamic performance of body diodes in Super Junction MOSFETs may cause difficulties when utilised in high frequency conversion circuits. Excessive reverse recovery as well as forward recovery may in the best case result in high conversion losses and EMI pollution where as in the worst case they may completely disrupt the converter operation. In this paper, using an auxiliary snubber circuit to control the reverse recovery and connecting a fast diode in parallel to a super junction switch to reduce the forward recovery is proposed. As documented by numerous experimental results, both proposed concepts work well and both recoveries may be largely avoided. Implementation of the proposed concepts in a forward boost, reverse buck circuit resulted in efficiencies close to 98.5% in 3-12.5kW load range while operating at 62.5kHz.
机译:当在高频转换电路中使用时,超级结MOSFET中体二极管的动态性能差,可能会造成困难。在最佳情况下,过度的反向恢复和正向恢复可能会导致高转换损耗和EMI污染,而在最坏情况下,它们可能会完全破坏转换器的运行。本文提出了一种使用辅助缓冲电路控制反向恢复并将快速二极管与超级结开关并联以降低正向恢复的方法。正如大量实验结果所证明的那样,这两个提议的概念都可以很好地工作,并且可以大大避免两个回收率。在正向升压,反向降压电路中实施所提出的概念后,在312.5kW的负载范围内以62.5kHz工作时,效率接近98.5%。

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