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首页> 外文期刊>IEICE Electronics Express >A unified system level error model of crosstalk and electromigration for on-chip interconnect
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A unified system level error model of crosstalk and electromigration for on-chip interconnect

机译:片上互连的串扰和电迁移的统一系统级误差模型

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摘要

The continuous scaling of feature dimensions and the much more complex IC composition are pushing interconnect reliability to its limit, resulting in many fault tolerant interconnect schemes being proposed. At the system level, real-scenario platform simulation is conducted to choose the optimal combination of each part, and various fault tolerant schemes are also compared. In a real-scenario platform simulation, a more practical error model in addition to white noise is needed. So, this paper suggests integrative simple noise and error probability model using the regression analysis with respect to physical behaviors of crosstalk and electromigration. This model can be used in system level simulation to choose an optimal fault-tolerant scheme. In this paper, the integrated crosstalk glitch, and delay model had over 99% accuracy with referenced model, and can apply to system level simulation. 65 nm, 32 nm, 22 nm technologies were used to extract the interconnect parasitic.
机译:特征尺寸的连续缩放和更为复杂的IC构成将互连可靠性推到了极限,从而导致提出了许多容错互连方案。在系统级别,进行了真实场景的平台仿真,以选择各个部分的最佳组合,并且还比较了各种容错方案。在真实场景的平台仿真中,除了白噪声外,还需要更实用的误差模型。因此,本文针对串扰和电迁移的物理行为,使用回归分析提出了综合的简单噪声和错误概率模型。该模型可用于系统级仿真中,以选择最佳的容错方案。本文提出的串扰毛刺和时延综合模型与参考模型相比,具有超过99%的精度,可应用于系统级仿真。 65 nm,32 nm,22 nm技术用于提取互连寄生物。

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