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Structural, electrical and optical studies on spray deposited Cadmium Sulphide and Copper Indium Disulphide thin films

机译:喷涂沉积的硫化镉和二硫化铜铟薄膜的结构,电学和光学研究

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CdS and CuInS2 thin films are deposited by spray pyrolysis technique. CdS thin films are deposited from the aqueous solution of cadmium chloride and thiourea with [Cd]/[S] ratio =1 on glass and ITO coated glass substrates at temperature of about 4000C. CuInS2 thin films are deposited on glass substrates at 350oC from the aqueous solutions of copper chloride, indium chloride and thiourea with [Cu]/[In] ratio =1.1 and [Cu]/[In] ratio =1.25. The ratio of [S]/[Cu] = 3.5 in both the cases. X-ray diffraction shows that the films are polycrystalline in nature. The grain size and strain in the films are calculated from XRD. Surface morphology of the deposited films is observed by SEM. Hot probe method is used to determine the conductivity type of the films. Resistivity of the films is determined by van der Pauw method. Resistivity of all the films is in the order of 10-2 ohm-cm. Thickness and refractive index of the thin films is measured using an Ellipsometer. UV-Vis analysis is carried out to measure the energy gap of the films. The bandgap of 2.43eV and ~1.48eV is obtained for CdS and CuInS2 thin films, respectively. The CdS film shows absorption coefficient (α) of about 2 x 104 cm–1 near the absorption edge. All the CdS films have transparency of about 70% in the wavelength range of 510nm – 800nm. The CuInS2 films have absorption coefficient (α) in the order of 104 cm–1 in the visible and red region of the absorption spectra.
机译:通过喷雾热解技术沉积CdS和CuInS2薄膜。在大约4000℃的温度下,从氯化镉和硫脲的水溶液中以[Cd] / [S] = = 1的比例在玻璃和ITO涂覆的玻璃基板上沉积CdS薄膜。 CuInS2薄膜在350oC下从氯化铜,氯化铟和硫脲的水溶液中以[Cu] / [In] = 1.1,[Cu] / [In] = 1.25沉积在玻璃基板上。在两种情况下,[S] / [Cu]之比= 3.5。 X射线衍射表明该膜本质上是多晶的。薄膜中的晶粒尺寸和应变由XRD计算得出。通过SEM观察沉积膜的表面形态。使用热探针法确定薄膜的导电类型。膜的电阻率通过van der Pauw方法确定。所有薄膜的电阻率约为10-2 ohm-cm。薄膜的厚度和折射率使用椭偏仪测量。进行UV-Vis分析以测量膜的能隙。 CdS和CuInS2薄膜的带隙分别为2.43eV和〜1.48eV。 CdS膜在吸收边缘附近显示约2 x 104 cm-1的吸收系数(α)。所有CdS膜在510nm – 800nm波长范围内的透明度约为70%。 CuInS2薄膜在吸收光谱的可见区和红色区的吸收系数(α)约为104 cm-1。

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