Studies on growth parameters of Lead Iodide crystals by Surfacetopography grown gel technique

摘要

The Lead Iodide crystals have been grown by gel technique at constant temperature of 300C. Then, these crystals were characterized by XRD, Surface topography, and EDAX. XRD of these crystals, were recorded and compared. They are almost matching with ASTM data of Lead Iodide (Card No.7/235). Lattice constants are observed to be sensitively affected by doping. The structure of the Lead Iodide found to be polycrystalline having hexagonal structure. The surface topography of these thin films has been related to the growth parameters. It is established that the growth has been taken placed by two-dimensional nucleation mechanism and by spreading and pilling of growth layers. The elemental analysis of these crystals infers the proper inclusion of Lead and Iodine