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Preparation and Characterization of Vanadium Pentoxide by DC-Magnetron Sputtering

机译:直流磁控溅射法制备五氧化二钒及其表征

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In this work, the structural properties of the monocrystalline vanadium pentoxide have been presented. Vanadium pentoxide (V2O5) films were deposited by using a DC reactive magnetron sputtering system at a working pressure of 8.5x10-2mbar.The sputtered vanadium atoms were sputtered and oxidized in presence O2:Ar gas mixture by (5/95,10/90, 20/80,30/70,50/50). Employment of magnetron results in the formation of V2O5 in the final samples according to the XRD analysis, increase the roughness and hence surface area of the produced V2O5 nanostructures. The results of X-rays are shown to us, the deposited films were formed by nanoparticles with an average grain size in the range of (52.11nm to 98.03) nm and roughness Ave (nm) in the range of (1.04nm to 8.88nm). The deposited films are identified to be polycrystalline nature with a cubic structure along ((001), (111)) and ((200)) orientation also MonoV2O5, Cub VO were found as deposited. The texture of the films was observed using SEM and AFM, it was observed that the grain size was increased with increasing the O2 percentage. These improvements in the structural properties of the produced vanadium pentoxide make these nanostructures good candidates for specific applications, such as photo detectors, solar cells, electro chromic smart window and gas sensor.
机译:在这项工作中,已经提出了单晶五氧化二钒的结构性质。在工作压力为8.5x10-2mbar的条件下,通过直流反应磁控溅射系统沉积五氧化二钒(V2O5)膜,溅射溅射出的钒原子并在O2:Ar气体存在下以(5 / 95,10 / 90)进行氧化。 ,20 / 80,30 / 70,50 / 50)。磁控管的使用导致根据XRD分析在最终样品中形成V2O5,增加了粗糙度,并因此增加了所生产V2O5纳米结构的表面积。向我们展示了X射线的结果,沉积的膜是由平均粒径在(52.11nm至98.03)nm范围内且粗糙度Ave(nm)在(1.04nm至8.88nm)范围内的纳米颗粒形成的)。所沉积的膜被鉴定为具有沿着((001),(111))和((200))取向的立方结构的多晶性质,还发现MonoV2O5,Cub VO被沉积。使用SEM和AFM观察膜的织构,观察到晶粒尺寸随着O 2百分比的增加而增加。生产的五氧化二钒的结构性能的这些改进使这些纳米结构成为特定应用(例如光电探测器,太阳能电池,电致变色智能窗和气体传感器)的良好候选者。

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