Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

摘要

It has been gradually realized that the sustainable electronic devices are of great prospects for sustainable applications in electronic technology products. From another point of view, a device with multiple physical performances would be a potential candidate for next generation multifunctional electronics. In this report, a flexible memory device based on sweet potato skin (SPS) was demonstrated, which presented a stable memory performance over 500 cycles and a large switching resistance ratio, and the current-voltage (I-V) hysteretic loop accompanied by capacitance effect and negative differential resistance state. In order to carry out detailed mechanism analysis, two materials (ITO or Ti) with different work functions as the bottom electrode and Ag as the top electrode were used to prepare two memristive devices. It can be confirmed that the conductive behavior obeys Schottky emission and direct tunneling at low voltage region, while it follows the hopping conduction at high voltage region. In a word, the selected SPS, a sustainable waste material, can be employed to prepare bioelectronic devices, which has a potential application value in green electronic products.