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Contribution of Ni KLL Auger Electrons to the Probing Depth of the Conversion Electron Yield Measurements

机译:Ni KLL俄歇电子对转换电子产率测量的探测深度的贡献

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The averaged attenuation length of emitted electrons with the conversion electron yield (CEY) method was evaluated for Ni films with the x-rays below and above the Ni K absorption edge. The evaluated attenuation length was 13.1 nm with the x-rays below the Ni K absorption edge, and it became 24.0 nm with the contribution of Ni KLL Auger electrons that had the attenuation length of 78.1 nm. The probing depth of the CEY measurements are determined both the penetration depth of x-rays and the attenuation length of emitted electrons, and the modification of the probing depth was investigated with the grazing incidence condition. The glancing angle dependence of the CEY was compared with the model calculation, and the probing depth of around 1.6 nm was realized under the total reflection condition. The probing depth was controlled from 1.6 nm to the attenuation length by changing the glancing angle.
机译:对于X射线在Ni K吸收边缘以下和以上的Ni膜,用转换电子产率(CEY)方法评估了发射电子的平均衰减长度。在x射线低于Ni K吸收边缘的情况下,评估的衰减长度为13.1 nm,在Ni KLL Auger电子的作用下衰减长度为78.1 nm,其衰减值为24.0 nm。确定CEY测量的探测深度既可以确定X射线的穿透深度,也可以确定发射电子的衰减长度,并根据掠入射条件研究探测深度的变化。将CEY的掠射角依赖性与模型计算进行了比较,在全反射条件下实现了约1.6 nm的探测深度。通过改变掠射角,将探测深度从1.6nm控制到衰减长度。

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