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首页> 外文期刊>American Journal of Optics and Photonics >Variation of the Photoionization Cross-Section with the Position of a Hydrogenic Donor Impurity in a Gallium Arsenide Quantum Well Dot of Square Cross-Section
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Variation of the Photoionization Cross-Section with the Position of a Hydrogenic Donor Impurity in a Gallium Arsenide Quantum Well Dot of Square Cross-Section

机译:方形截面的砷化镓量子阱中光电离截面与氢供体杂质位置的变化

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In the present work, a theoretical study of the variation of the photoionization cross-section with the incident photon frequency and theaxial position of ahydrogenicdonor impurity in GaAsquantum well dot of square cross-sectionis carried out. In the calculation, a trial wave function in the effective mass approximation and a finite potential wellis used. The wave function is constructed with an appropriate envelope wave function that satisfies the boundary conditions, i.e., the wave function vanishes at the boundary. A trial wave function is employed to calculate the total energy of the hydrogenic donor impurity in the ground state. The total energy is then minimized with respect to the variational parameter in the trial wave function to obtain the minimum energy. The minimized total energies are then used to determine the donor binding energies within the quantum dot. It is observed that for a quantum dot of constant cross-section, the binding energy increases with a decrease in dot length to a peak value; thereafter it decreases rapidly towards zero. The binding energies obtained are used to compute the photoionization cross-section of the hydrogenic donor impurity as a function of the incident photon frequency for different positions of the donor impurity. It isobserved that the photoionization cross-sections rise steeply to their peaks from almost zero value then gradually decrease as the photon frequency increases until they become almost constant for very high photon frequencies. The photoionization cross-section peak is much higher for the hydrogenicdonor impurity located closest to the centre of the quantum well dot than for donor impurity located farther away from the dot centre. This indicates that the photoionization cross-section is sensitive to the location of the donor impurity in the quantum dot and to the incident photon frequency.
机译:本文对正方形截面的GaAsquantum阱点中光电离截面随入射光子频率和水生施主杂质轴向位置的变化进行了理论研究。在计算中,使用有效质量近似中的试波函数和有限势阱。波函数由满足边界条件的适当包络波函数构成,即波函数在边界处消失。利用试波函数来计算基态氢供体杂质的总能量。然后相对于试验波函数中的变化参数使总能量最小化以获得最小能量。然后,将最小化的总能量用于确定量子点内的施主结合能。观察到,对于具有恒定横截面的量子点,结合能随着点长度的减小而增加,直至峰值。此后,它迅速减小到零。所获得的结合能用于计算氢供体杂质的光电离截面,该氢离子是供体杂质不同位置的入射光子频率的函数。可以看到,光电离截面从几乎为零的值陡峭地上升到其峰值,然后随着光子频率的增加而逐渐减小,直到对于非常高的光子频率变得几乎恒定为止。位于最靠近量子阱点中心的氢供体杂质的光电离截面峰比位于离点中心更远的施主杂质的光电离截面峰高得多。这表明光电离截面对量子点中施主杂质的位置和入射光子频率敏感。

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