Analyze the effect of window layer (AlAs) for increasing the efficiency of GaAs based solar cell

摘要

Solar energy is the most important renewable source and convertible into useful form with no transmission cost and environment pollution. The main drawback of currently used photovoltaic cell is its low conversion efficiency and materials with the appropriate band gaps. Recently it has been shown that the GaAs based p-i-n solar cell becomes a promising material for very h igh efficiency solar cell. An ideal model for p-i-n reference cell has been developed and used to theoretically explore the current-voltage characteristics on the host cell properties. The purpose of this paper is to study the performance of AlAs material use as window layer in p-i-n reference cell instead of AlGaAs and evaluated the performance with various parameters. Short circuit current density, open circuit voltage and efficiency are needed to be calculated with the dependencies of band gap energy, carrier concentration and temperature. Significant effects of width lengths on the performance of window layer are evaluated. These calculations will do at cell temperature of 300k. After all comparing these, GaAs based p-i-n reference cell with AlAs window layer offers the maximum efficiency