Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

摘要

An enhanced, repeatable and robust resistive switching phenomenon was observedin Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited bythe sol-gel approach and spin coating technique, respectively. An enhanced bistablebipolar resistive switching (BRS) phenomenon without electro-forming process, lowswitching voltage ( 2 V) and moderate retention characteristics of 104 s along witha high Roff /Ron resistance ratio 103 was achieved. The current conduction analysisshowed that the space charge limited conduction (SCLC) and Schottky emissionconduction dominate in the high voltage range, while thermally active charge carriers(ohmic) in the lower voltage range. The impedance spectroscopy study indicatesthe formation of current conducting path and rupturing of oxygen vacancies duringSET and RESET process. ? 2017 Author(s). All article content, except where otherwisenoted, is licensed under a Creative Commons Attribution (CC BY) license.