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Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

机译:具有超导纳米沉淀的绝缘硅膜的大磁阻

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We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T. The comparison of the transport properties of superconducting samples with that of insulating ones reveals that the large magnetoresistance is associated with the appearance of local superconductivity. A simple phenomenological model based on localized Cooper pairs and hopping quasiparticles is able to describe the temperature and magnetic field dependence of the sheet resistance of such films.
机译:我们报道了在低于大约7 K的临界温度的不均匀绝缘Si:Ga膜中的大的负磁阻和正磁阻。在低于3 K的温度和8 T的磁场下,磁阻效应超过300%。超导传输特性的比较具有绝缘样品的样品表明,大的磁阻与局部超导的出现有关。基于局部库珀对和跳跃准粒子的简单现象学模型能够描述这种薄膜的薄层电阻对温度和磁场的依赖性。

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