Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

摘要

A clean and flat GaSb surface without native oxides has been attained by H₂ plasma cleaning and subsequent in-situ N₂ plasma nitridation process at 300 oC. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by thermal desorption spectroscopy (TDS) analysis. The suitable heat treatment process window for preparing a clean GaSb surface is given. Auger electron spectroscopy (AES) analysis indicates that native oxides were completely removed on the GaSb surface after H₂ plasma exposure and the pure nitridation of the clean GaSb surface was obtained at a relatively low temperature of 300 °C. This pure nitridation of GaSb have a possibility to be used as a passivation layer for high quality GaSb MOS devices.