Plasma processing process to improve in-situ chamber cleaning efficiency in plasma processing chamber

摘要

Embodiments of the present disclosure include methods for improving in-situ chamber cleaning efficiency for plasma processing chambers used in semiconductor substrate manufacturing processes. In one embodiment, a method for performing a plasma processing process after cleaning a plasma process comprises performing the cleaning process in a plasma processing chamber with the substrate not disposed thereon, followed by at least Supplying a plasma processing gas mixture comprising a hydrogen containing gas and / or an oxygen containing gas into the plasma processing chamber; and applying RF source power to the processing chamber to form a plasma from the plasma processing gas mixture; Plasma treating an inner surface of the processing chamber. [Selected figure] Figure 1