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首页> 外文期刊>AIP Advances >Potassium acceptor doping of ZnO crystals
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Potassium acceptor doping of ZnO crystals

机译:ZnO晶体的钾受体掺杂

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ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ~1 × 1016 cm?3. IR measurements show a local vibrational mode (LVM) at 3226 cm?1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm?1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.
机译:ZnO块状单晶通过在950°C扩散进行钾掺杂。正电子an没光谱证实了锌空位的填充和正电子的不同俘获中心。二次离子质谱测量表明,钾的扩散高达10μm,浓度约为1×1016 cm?3。红外测量结果表明,在掺钾的样品中,在3226 cm?1处,在9 K的温度下,局部振动模式(LVM)随后被氢化。 LVM归因于钾受体附近的O–H键拉伸模式。当氘代替氢时,在2378cm-1处观察到一个峰。 O-H峰比O-D峰宽得多,这可能是由于振动寿命异常低所致。同位素频率比与其他氢络合物中的值相似。钾掺杂在室温下将电阻率提高到3个数量级。掺杂样品的供体能级为0.30 eV。

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