Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

摘要

The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VO_x) composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VO_x composite in the Pt/VO_x/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V?1 at 0.6 V. The VO_x composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VO_x composites. We find that the nanostructure details of the insulating VO_x layer can be critical in enhancing the performance of MIM diodes.