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Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

机译:超快缺陷动态:采用非晶态硒薄膜的所有光宽带交换的新方法

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Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
机译:光开关提供的开关速度比电子开关高,但是,在大多数情况下,利用有源介质的带间过渡进行开关。结果,信号遭受了严重的损失。在本文中,我们演示了在a-Se薄膜的子带隙区域中ps时标上简单而有效的超快速宽带全光切换,其固有吸收非常弱。光学开关归因于短暂的瞬态缺陷,这些瞬态缺陷在带隙中形成局部状态,并具有较大的电子-声子耦合。我们通过与实验一致的第一原理模拟对这些过程进行建模。

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