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首页> 外文期刊>Crystals >Stochastic and Deterministic Crystal Structure Solution Methods in GSAS-II: Monte Carlo/Simulated Annealing Versus Charge Flipping
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Stochastic and Deterministic Crystal Structure Solution Methods in GSAS-II: Monte Carlo/Simulated Annealing Versus Charge Flipping

机译:GSAS-II中的随机和确定性晶体结构求解方法:蒙特卡罗/模拟退火与电荷翻转

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Crystallographic studies frequently involve the determination of a previously unknown crystal structure; General Structure Analysis System (GSAS)-II provides two methods for this purpose. The Monte Carlo/simulated annealing method is fundamentally stochastic in nature; random trials are tested for suitability by comparing calculated structure factors with a suite of observed ones. In contrast, the charge flipping method may begin with a suite of random structure factor phases, but the subsequent mathematical steps are entirely deterministic even though they appear to display chaotic behavior. This paper will briefly describe these methods as implemented in GSAS-II, illustrating their use with examples.
机译:晶体学研究经常涉及确定以前未知的晶体结构。通用结构分析系统(GSAS)-II为此提供了两种方法。蒙特卡洛/模拟退​​火方法本质上是随机的。通过将计算的结构因子与一组观察到的结构因子进行比较,对随机试验的适用性进行了测试。相反,电荷翻转方法可以从一组随机结构因子阶段开始,但是随后的数学步骤完全是确定性的,即使它们看起来表现出混乱的行为。本文将简要介绍在GSAS-II中实现的这些方法,并举例说明其用法。

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