Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

摘要

This article presents an automated test system targeting the large-scaleanalysis of ultra-thin MOS gate dielectric degradation. The system allows forstress tests at elevated temperatures as well as supply voltages and long-termtests of thousands of MOS devices simultaneously. The aim is to build-up largeand hence significant statistics about the degradation process as a function of time.