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首页> 外文期刊>Advances in Electrical and Electronic Engineering >Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level
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Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level

机译:基于全晶体管级的交叉耦合电荷泵综合

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This paper presents utility for the design of the cross-coupled charge pump, which is used for supplying peripherals with low current consumption on the chip, as the EEPROM or FLASH memories. The article summarizes the knowledge in the field of the theoretical and practical analysis of the cross-coupled charge pump (design relationships and their connection with the pump parameters, as the threshold voltage, power supply voltage, clock signal frequency, etc.) that are applicated in the design algorithm. Optimal MOSFETs sizes (W, L) were find based on the construct of the time response characteristics of the pump sub-block and finding of the maximal voltage increase in the active interval of the clock signal and minimizing of the pump losses, as the switch reverse current, inverter cross current, etc. Synthesis process includes the design of the pump functional blocks with dominant real properties, which are described based on BSIM equations for long channel MOSFET. The pump stage complex model is applicated for estimation of the number of pump stages via state-space model description and using of the interpolation polynomial functions in the algorithm. It involves the construction of the time response characteristic due to the state variables and prediction of the number of the pump stages for the next cycle based on the previous data. Optimization of the pump area is based on the minimizing of the main capacitor in each of the pump stages (number of the pump stages must be increased to obtain the desired output voltage value.) Access is designed to stress the maximum pump voltage efficiency. The whole procedure is summarized in the practical example, in which the solution is shown both in terms of maximal voltage efficiency and the optimal pump area on a chip with respect to the clock signal frequency. Added functions of the design environment are explained, inclusive of the designed pump netlist generating for professional design environment Mentor Graphics including the real models of components that are available in library MGC Design Kit. The procedure gives designer credible results without long timeconsuming optimization process. In addition, the complex model allows the inclusion effects of higher-levels.
机译:本文介绍了用于交叉耦合电荷泵设计的实用程序,该电荷泵用于为芯片上的EEPROM或FLASH存储器提供低电流消耗的外围设备。本文总结了交叉耦合电荷泵的理论和实践分析领域的知识(设计关系及其与泵参数的关系,如阈值电压,电源电压,时钟信号频率等),应用在设计算法中。根据泵子模块的时间响应特性的构造,找到最佳的MOSFET尺寸(W,L),并在时钟信号的有效间隔中找到最大电压增加,并最大程度地减小泵损耗(作为开关)合成过程包括具有主要实际特性的泵功能模块的设计,这些功能模块是基于BSIM方程描述的长通道MOSFET。该泵级复杂模型适用于通过状态空间模型描述和算法中使用插值多项式函数来估计泵级数。它涉及由于状态变量而导致的时间响应特性的构造,以及根据先前数据预测下一个循环的泵级数的方法。泵浦面积的优化基于最小化每个泵浦级中的主电容器(必须增加泵浦级数以获得所需的输出电压值。)通道设计为强调最大泵浦电压效率。在实际示例中总结了整个过程,其中从最大电压效率和芯片上相对于时钟信号频率的最佳泵浦面积两个方面展示了解决方案。解释了设计环境的附加功能,包括为专业设计环境Mentor Graphics生成的设计泵网表,其中包括库MGC Design Kit中可用的组件的真实模型。该过程可为设计人员提供可靠的结果,而无需花费大量时间进行优化。另外,复杂模型允许更高级别的包含效应。

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