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首页> 外文期刊>Advances in Materials Physics and Chemistry >A First-Principles Study of Structure-Property Correlation and the Origin of Ferrimagnetism in Gallium Ferrite
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A First-Principles Study of Structure-Property Correlation and the Origin of Ferrimagnetism in Gallium Ferrite

机译:镓铁氧体的结构特性相关性和亚铁磁性的起源的第一性原理研究

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A first-principles study of structure property correlation and the origin of ferrimagnetism is presented based on LSDA+U method. In particular, the results for the ground state structure, electronic band structure, density of states, Born effective charges, spontaneous polarization and cationic disorder are discussed. The calculations were done using Vienna ab-initio simulation package (VASP) with projector augmented wave method. We find that the ground state structure is orthorhombic and insulating having A-type antiferro-magnetic spin configuration. The cationic disorder is found to play an important role. Although the cationic site disorder is not spontaneous in the ground state, interchange of octahedrally coordinated Ga2 and Fe2 sites is most favored. We find that ferrimagnetism in gallium ferrite is primarily due to this exchange between Ga-Fe sites such that Fe spins at Ga1 and Ga2 sites are antiferromagnetically aligned while maintaining ferromagnetic coupling between Fe spins at Ga1 and Fe1 sites as well as between Fe spins at Ga2 and Fe2 sites. Further, the partial density of states shows noticeable hybridization of Fe 3d, Ga 4s, Ga 4p and O 2p states indicating some covalent character of Ga/Fe-O bonds. However, the charge density and electron localization functions show largely the ionic character of these bonds. Our calculation predicts spontaneous polarization of ~59 μC/cm~2 along b-axis.
机译:基于LSDA + U方法提出了结构特性相关性和亚铁磁性成因的第一性原理。尤其讨论了基态结构,电子能带结构,态密度,玻恩有效电荷,自发极化和阳离子无序的结果。使用带有投影仪增强波方法的Vienna Ab-initio模拟软件包(VASP)进行了计算。我们发现,基态结构是正交晶且绝缘的,具有A型反铁磁自旋结构。发现阳离子疾病起重要作用。尽管阳离子位点障碍在基态下不是自发的,但最有利于八面体配位的Ga2和Fe2位点的互换。我们发现,镓铁氧体中的亚铁磁性主要是由于Ga-Fe位置之间的这种交换,使得Ga1和Ga2位置的Fe自旋反铁磁性排列,同时在Ga1和Fe1位置的Fe自旋之间以及Ga2的Fe自旋之间保持铁磁耦合和Fe2站点。此外,状态的部分密度显示出Fe 3d,Ga 4s,Ga 4p和O 2p态的明显杂化,表明Ga / Fe-O键具有某些共价特性。但是,电荷密度和电子定位功能在很大程度上显示了这些键的离子特性。我们的计算预测沿b轴的自发极化为〜59μC/ cm〜2。

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