首页> 外文期刊>Advances in condensed matter physics >Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices
【24h】

Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices

机译:表面辅助发光:n-GaN器件的PL黄带和EL

获取原文
           

摘要

Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects. By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.
机译:尽管每个人都应该知道,测量永远不会直接在材料上而是在设备上进行,但通常情况并非如此。设备是能够交换能量的物理系统,因此受制于确定其提供信息的物理定律。因此,我们不应像天真地假设光致发光(PL)是没有表面效应的整体发射那样,忽略测量中的器件效应。通过用适当的GaN表面器件模型代替这种不合理的假设,其黄带PL变为表面辅助发光,从而可以预测当将n-GaN器件带入其表面时最近在n-GaN器件中观察到的弱电致发光。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号