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Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

机译:硫代乙酰胺浓度对光电应用单相SnS和SnS2薄膜制备的影响

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Eco-friendly tin sulfide (SnS) thin films were deposited by chemical solution process using varying concentrations of a sulfur precursor (thioacetamide, 0.50–0.75 M). Optimized thioacetamide concentrations of 0.6 and 0.7 M were obtained for the preparation of single-phase SnS and SnS2 films for photovoltaic absorbers and buffers, respectively. The as-deposited SnS and SnS2 thin films were uniform and pinhole-free without any major cracks and satisfactorily adhered to the substrate; they appeared in dark-brown and orange colors, respectively. Thin-film studies (compositional, structural, optical, and electrical) revealed that the as-prepared SnS and SnS2 films were polycrystalline in nature; exhibited orthorhombic and hexagonal crystal structures with (111) and (001) peaks as the preferred orientation; had optimal band gaps of 1.28 and 2.92 eV; and exhibited p- and n-type electrical conductivity, respectively. This study presents a step towards the growth of SnS and SnS2 binary compounds for a clean and economical power source.
机译:使用不同浓度的硫前体(硫代乙酰胺,0.50–0.75 M)通过化学溶液法沉积环保型硫化锡(SnS)薄膜。对于分别用于光伏吸收剂和缓冲剂的单相SnS和SnS2膜的制备,获得了0.6和0.7 M的最佳硫代乙酰胺浓度。沉积的SnS和SnS2薄膜均匀且无针孔,没有任何大的裂纹,并且令人满意地粘附在基板上。它们分别以深棕色和橙色出现。薄膜研究(组成,结构,光学和电学)表明,所制备的SnS和SnS2膜本质上是多晶的。表现出具有(111)和(001)峰为优选取向的正交和六方晶体结构;最佳带隙为1.28和2.92 eV;并分别显示出p型和n型导电性。这项研究提出了向SnS和SnS2二元化合物的生长迈出的一步,以提供一种清洁,经济的电源。

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