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Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

机译:硫代酰胺浓度对光电应用的单相Sns和SNS2薄膜制备的影响

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摘要

Eco-friendly tin sulfide (SnS) thin films were deposited by chemical solution process using varying concentrations of a sulfur precursor (thioacetamide, 0.50−0.75 M). Optimized thioacetamide concentrations of 0.6 and 0.7 M were obtained for the preparation of single-phase SnS and SnS2 films for photovoltaic absorbers and buffers, respectively. The as-deposited SnS and SnS2 thin films were uniform and pinhole-free without any major cracks and satisfactorily adhered to the substrate; they appeared in dark-brown and orange colors, respectively. Thin-film studies (compositional, structural, optical, and electrical) revealed that the as-prepared SnS and SnS2 films were polycrystalline in nature; exhibited orthorhombic and hexagonal crystal structures with (111) and (001) peaks as the preferred orientation; had optimal band gaps of 1.28 and 2.92 eV; and exhibited p- and n-type electrical conductivity, respectively. This study presents a step towards the growth of SnS and SnS2 binary compounds for a clean and economical power source.
机译:使用不同浓度的硫前体(硫代乙酰胺,0.50-0.75m),通过化学溶液方法沉积环保型硫化物(SNS)薄膜。优化0.6和0.7米的优化硫代乙酰胺浓度,用于制备用于光伏吸收器和缓冲剂的单相Sn和SNS2薄膜。沉积的SNS和SNS2薄膜是均匀的,无任何重大裂缝的无任何重大裂缝并且令人满意地粘附到基材上;它们分别出现在深棕色和橙色的颜色中。薄膜研究(组成,结构,光学和电气)揭示了如制备的SNS和SNS2薄膜在自然界中是多晶的;具有(111)和(001)峰作为优选取向的正交和六边形晶体结构;具有1.28和2.92 eV的最佳带隙;并分别表现出p型和n型导电性。本研究介绍了用于清洁和经济的电源的SNS和SNS2二元化合物的生长。

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