Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology

摘要

In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).