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首页> 外文期刊>Chalcogenide Letters >STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ZnSe SEMICONDUCTOR NANOPARTICLES
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STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ZnSe SEMICONDUCTOR NANOPARTICLES

机译:ZnSe半导体纳米粒子的结构,光学和电学性质

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Zinc Selenide nanoparticles were synthesized by a microwave irradiation technique at 2.8 GHz using 7N purity Zn and Se powder in stoichiometric ratio as the starting materials. The crystal system and phase was confirmed by powder X-ray diffraction, the crystallite size was calculated using Scherer’s formula and found to be ~ 35 nm. Scanning electron microscope (SEM) also used to determine the size and shape of the nanoparticles which shows average particle size ~50 nm in agreement with PXRD and spherical in shape. The fluorescence study of ZnSe nanoparticles has been done and shows that the material is highly fluorescent. The broad emission peak at 401 nm (3.1 eV) has been observed in the fluorescence spectra this value is highly blue shifted towards the lower wavelength from the bulk value, which shows confinement effect. The temperature dependent electrical measurements on the synthesized nanoparticles were carried out. An anomaly in electrical studies was observed near ~ 488 K, which may be due to the glass phase transition. The resistivity of the synthesized nanoparticles was also calculated and found to be ~ >109 Ωcm.
机译:使用7N纯度的Zn和Se粉末以化学计量比为起始原料,通过微波辐射技术在2.8 GHz频率下合成硒化锌纳米颗粒。通过粉末X射线衍射确定晶体系统和相,使用Scherer公式计算微晶尺寸,发现为〜35nm。扫描电子显微镜(SEM)还用于确定纳米颗粒的尺寸和形状,该纳米颗粒的平均粒径约为50 nm,与PXRD一致,呈球形。 ZnSe纳米粒子的荧光研究已经完成,表明该材料是高度荧光的。在荧光光谱中观察到了在401 nm(3.1 eV)处的宽发射峰,该值从主体值向较低波长高度蓝移,这显示了限制作用。对合成的纳米颗粒进行了温度依赖性电测量。在电学研究中发现一个异常现象,大约在488 K附近,这可能是由于玻璃相变造成的。还计算了合成纳米颗粒的电阻率,发现其约为〜> 109Ωcm。

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