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A NUMERICAL SIMULATION ON ZINC SULFIDE (ZnS) BUFFER LAYER IN CuInS2 BASED THIN FILM SOLAR CELL

机译:CuInS2基薄膜太阳能电池中硫化锌(ZnS)缓冲层的数值模拟

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摘要

Zinc sulfide (ZnS) is the most suitable candidates for the CuInS2 among of the corresponding alternatives buffer layer. In this paper, the simulated performance of the baseline model of conventional CdS buffered-CuInS2 based thin film solar cell is proven with the performance of fabricated model. This method of simulation uses the experimental data from literature and an adequate fitting procedure. Meanwhile, the effect of the ZnS and the widths of buffer layer (CdS and ZnS) with the focus on energy diagram have been investigated.
机译:在相应的替代缓冲层中,硫化锌(ZnS)是最适合CuInS2的候选材料。在本文中,通过制造模型的性能证明了常规CdS缓冲CuInS2基薄膜太阳能电池的基线模型的模拟性能。这种模拟方法使用了来自文献的实验数据和适当的拟合程序。同时,研究了ZnS和缓冲层宽度(CdS和ZnS)对能量图的影响。

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