A newly developed technique, gap micro-lithography, used for the formation of I.R. micro-optical devices such as micro-lens arrays with a very long focal length, is described. The use of a three-component As-S-Se photoresist with a new efficient amine-based selective developer allows for the realization of soft contrast characteristics of the micro-lithographic process with a Xe-light source. Parameters and characteristics of micro-optical devices made using the gap micro-lithography method are discussed
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