Characterization of CuInSe₂ thin films obtained by RF magnetron co-sputtering from CuSe and In targets

摘要

The effect of the substrate temperature, fro m 550° C to 650° C, on the optical and structural properties of CuInSe 2 thin films deposited on glass substrates by R.F. Magnetron co-Sputtering of CuSe and In targets was studied. The characterization of the films was carried out via SEM, EDX, XRD, XPS, Raman spectroscopy and optical absorption in the UV -Visible range. SEM images taken in plain view show a change in the films morp hology as a function of the experimental parameters, and EDX show films with Cu-poor composition. The influence of the temperature on the crystallite sizes and micro-stress was evaluated b y XRD. Finally, the results sho w that the samples are polycrystalline with the tetragonal chalcop yrite CuInSe 2 structure. The Raman measurements revealed the presence of an In 2 Se 3 phase in the samples. The UV-Vis optical measurements showed the presence of a CuInSe 2 layer with a typical bandgap around 1.1 eV, together with o ther layers formed by homogeneous mixtures of CuInSe 2 + In 2 Se 3 with larger effective band -gaps.