The deposition of CuInSe₂ layer on glass substrate by SILAR method

摘要

The copper indium selenide (CuInSe 2 ) layer was successfully deposited on glass substrate via the successive ionic adsorption and reaction (SILAR) method. The layer has been dep osited in three steps and then was annealed for 12 hours under nitrogen atmo sphere at 100 o C. Diseleniumtetrathionate (H 2 Se 2 S 2 O 6 ) acid solution was used as the selenization precursor. The solid intermediates obtained at different steps of layer deposition process was investigated in detail by X-ray diffraction analysis (XRD) and X -ray photoelectron spectroscopy (XPS) in order to u nderstand the reaction pathway. XRD and XPS data showed that the annealing process for successful layer of copper indium selenide formation is necessary and the layer deposition phases sequence was Se . Cu x Se . mixture of phases . CuInSe 2 . Based on experiment results, the possible reactions that take place during the process of layer formation have been proposed.