Fabrication of organic light-emitting diode using molybdenum trioxide interlayer between electrode and organic interface

摘要

In this study, high-performance of organic light-emitting diodes (OLEDs) with a buffer layer of MoO$_3$ is demonstrated. With an optimal thickness of MoO$_3$ (12 nm), the luminance efficiency is found to be increased compared to the single layer anode OLED. To study the influence of MoO3 buffer layer on OLED performance, we deposited MoO$_3$ films with different thicknesses on the fluorine-doped tin oxide (FTO) surface and studied Ja??V and La??V characteristics of the OLED devices. Also, further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FESEM images. Here, we found that MoO3 (12 nm) buffer layer is a good choice to increase the efficiency of FTO-based OLED devices within the tunnelling region. Here, the maximum value of current efficiency is6.15 cd A$^{a??1}$.